A wideband millimeter-wave differential stacked-FET power amplifier with 17.3 dBm output power and 25% PAE in 45nm SOI CMOS
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IEEE
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http://xplorestaging.ieee.org/ielx7/8048779/8058449/08058965.pdf?arnumber=8058965
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 23-29.5 GHz Differential Power Amplifier in a 45-nm SOI CMOS Technology for 5G Millimeter-Wave Application;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14
2. A 60-GHz 32-Way Hybrid Power Combination Power Amplifier in 55-nm Bulk CMOS;IEEE Transactions on Microwave Theory and Techniques;2023-02
3. A 37-43GHz Two Way Current Combining Power Amplifier with 19.6-dBm P1dB for 5G Phased Arrays in 45nm-SOI CMOS;2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS);2021-11-28
4. A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS;AEU - International Journal of Electronics and Communications;2021-07
5. A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS;IEEE Journal of Solid-State Circuits;2021-05
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