A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/9411776/09380738.pdf?arnumber=9380738
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. 32.4 A 67.8-to-108.2GHz Power Amplifier with a Three-Coupled-Line-Based Complementary-Gain-Boosting Technique Achieving 442GHz GBW and 23.1% peak PAE;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
3. A Ka-Band CMOS Power Amplifier With OP1dB Improvement Employing a Diode-Connected Analog Linearizer;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-06
4. Matching Network Efficiency: The New Old Challenge for Millimeter-Wave Silicon Power Amplifiers;IEEE Microwave Magazine;2021-12
5. A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology;2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT);2021-09-13
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