32.4 A 67.8-to-108.2GHz Power Amplifier with a Three-Coupled-Line-Based Complementary-Gain-Boosting Technique Achieving 442GHz GBW and 23.1% peak PAE
Author:
Affiliation:
1. Tsinghua University,Beijing,China
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10454133/10454267/10454503.pdf?arnumber=10454503
Reference5 articles.
1. 24.6 An Instantaneously Broadband Ultra-Compact Highly Linear PA with Compensated Distributed-Balun Output Network Achieving >17.8dBm P1dB and >36.6% PAEP1dB over 24 to 40GHz and Continuously Supporting 64-/256-QAM 5G NR Signals over 24 to 42GHz
2. An $E$ -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS
3. A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS
4. Coupled Strip Transmission Line with Three Center Conductors
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1. Millimeter-wave PA design techniques in ISSCC 2024;Journal of Semiconductors;2024-04-01
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