A Ka-Band CMOS Power Amplifier With OP1dB Improvement Employing a Diode-Connected Analog Linearizer-Reference-Cited by-同舟云学术

A Ka-Band CMOS Power Amplifier With OP1dB Improvement Employing a Diode-Connected Analog Linearizer

Published:2023-06 Issue:6 Volume:70 Page:2271-2275
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Xiao Zehua¹^ORCID,You Fei¹^ORCID,Hao Peng¹^ORCID,Wang Yu¹,He Qian¹,Shen Ce¹^ORCID,Li Chuan¹^ORCID,Ma Mingming²^ORCID,Wu Jiayan¹^ORCID,Fan Yaojia¹,Qin Rongxing¹,He Songbai¹^ORCID

Affiliation:

1. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China

2. Science and Technology on Monolithic Integrated and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/10138208/10013702.pdf?arnumber=10013702

Reference15 articles.

1. A Wideband Class-AB Power Amplifier With 29–57-GHz AM–PM Compensation in 0.9-V 28-nm Bulk CMOS

2. A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS

3. A 28/38 GHz Dual-Band Power Amplifier for 5G Communication

4. A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS

5. A ${Ka}$ -Band Dual-Mode Power Amplifier in 65-nm CMOS Technology

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