A 37-43GHz Two Way Current Combining Power Amplifier with 19.6-dBm P<sub>1dB</sub> for 5G Phased Arrays in 45nm-SOI CMOS-Reference-Cited by-同舟云学术

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A 37-43GHz Two Way Current Combining Power Amplifier with 19.6-dBm P_1dB for 5G Phased Arrays in 45nm-SOI CMOS

Published:2021-11-28 Issue: Volume: Page:
ISSN:
Container-title:2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)
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Author:

Elgamal Mohamed A.¹,Weheiba M.²,Esmael Mohamed M.R.²,Abdalla Mohamed A. Y.¹,Mohieldin Ahmed N.³

Affiliation:

1. Cairo University,Electronics and Communications Engineering Department,Giza,Egypt

2. Analog Devices,Cairo,Egypt

3. Galala University,Faculty of Engineering,Electrical Engineering Department,Egypt

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9665417/9665446/09665449.pdf?arnumber=9665449

Reference7 articles.

1. A wideband millimeter-wave differential stacked-FET power amplifier with 17.3 dBm output power and 25% PAE in 45nm SOI CMOS

2. Two-Way Current-Combining $W$-Band Power Amplifier in 65-nm CMOS

3. A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS

4. A Ka-Band Stacked Power Amplifier with 24.8-dBm Output Power and 24.3% PAE in 65-nm CMOS Technology

5. A 28-GHz Stacked Power Amplifier with 20.7-dBm Output P 1dB in 28-nm Bulk CMOS

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