A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS-Reference-Cited by-同舟云学术

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A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Dasgupta Kaushik,Daneshgar Saeid,Thakkar Chintan,Jaussi James,Casper Bryan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8700146/8701725/08701834.pdf?arnumber=8701834

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. An 8-way series-parallel combiner based power amplifier for mm-wave 5G communication in 40-nm CMOS;AEU - International Journal of Electronics and Communications;2024-04

3. A Millimeter-Wave Three-Way Doherty Power Amplifier for 5G NR OFDM;IEEE Journal of Solid-State Circuits;2023-05

4. A Coupler Balun Load-Modulated Power Amplifier With Extremely Wide Bandwidth;IEEE Transactions on Microwave Theory and Techniques;2023-04

5. RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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