RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications
Author:
Affiliation:
1. GLOBALFOUNDRIES,Malta,NY,USA,12020
2. Power Technology Solutions,Palo Alto,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118043.pdf?arnumber=10118043
Reference7 articles.
1. RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications
2. A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
3. A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions
4. CMOS RF reliability for 5G mm Wave applications-Challenges and Opportunities;srinivasan;Proc IEEE Int Rel Phy Symp,2021
5. A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mm Wave applications;srinivasan;Proc IEEE Int Rel Phy Symp,2021
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Development of Parallel RF Power Amplifier Using GaN HEMT with Independent Biasing Circuits for Wireless Communication;2024 IEEE International Black Sea Conference on Communications and Networking (BlackSeaCom);2024-06-24
2. A 22FDX® Wi-Fi PA Demonstrating a New LDMOS Device with 10V Breakdown Achieving Output Power of 29.5dBm at 40% PAE;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
3. Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
4. Experimental Analysis of Power Amplifier Performance at Microwave Frequency;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05
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