RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications

Author:

Srinivasan P.1,Lestage J.1,Syed S.1,Hui X.1,Moss S.1,Restrepo O. D.1,Gonzalez O. H.1,Chen Y.1,McKay T.1,Bandyopadhyay A.1,Cahoon N.1,Guarin F.1,Min B.1,Gall M.1,Ludvik S.2

Affiliation:

1. GLOBALFOUNDRIES,Malta,NY,USA,12020

2. Power Technology Solutions,Palo Alto,CA,USA

Publisher

IEEE

Reference7 articles.

1. RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications

2. A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS

3. A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

4. CMOS RF reliability for 5G mm Wave applications-Challenges and Opportunities;srinivasan;Proc IEEE Int Rel Phy Symp,2021

5. A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mm Wave applications;srinivasan;Proc IEEE Int Rel Phy Symp,2021

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Development of Parallel RF Power Amplifier Using GaN HEMT with Independent Biasing Circuits for Wireless Communication;2024 IEEE International Black Sea Conference on Communications and Networking (BlackSeaCom);2024-06-24

2. A 22FDX® Wi-Fi PA Demonstrating a New LDMOS Device with 10V Breakdown Achieving Output Power of 29.5dBm at 40% PAE;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Experimental Analysis of Power Amplifier Performance at Microwave Frequency;2024 IEEE 9th International Conference for Convergence in Technology (I2CT);2024-04-05

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