V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5159259/5165586/05165726.pdf?arnumber=5165726
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W;IEEE Microwave and Wireless Technology Letters;2024-05
3. A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond fT;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-02
5. GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band;IEEE Electron Device Letters;2017-12
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