Broadband GaN-Based Power Amplifier MMIC for <i>V</i>-Band With Saturated Output Power Over 2 W-Reference-Cited by-同舟云学术

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Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

Published:2024-05 Issue:5 Volume:34 Page:532-535
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Guo Fangjin¹,Xu Yuehang¹^ORCID,Wang Weibo²,Chen Zhongfei²,Luo Chenjie²^ORCID,Tao Hongqi²^ORCID

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

2. Nanjing Electronic Device Institute, Nanjing, China

Funder

National Natural Science Foundation of China

National research program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10527217/10487963.pdf?arnumber=10487963

Reference20 articles.

1. Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power

2. Full W-band power amplifier/combiner utilizing GaAs technology

3. 70–105 GHz wideband GaN power amplifiers;Margomenos

4. First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficiency Enhancement of Power Amplifier Using Power Pulsewidth Modulation for Wireless Power Transfer;IEEE Microwave and Wireless Technology Letters;2024-09

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