GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band-Reference-Cited by-同舟云学术

GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band

Published:2017-12 Issue:12 Volume:38 Page:1708-1711
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Micovic M.^ORCID,Brown D. F.^ORCID,Kurdoghlian A.,Santos D.,Grabar B.,Magadia J.,Khalaf I.,Tai H. Y.,Prophet E.,Burnham S. D.^ORCID,Wong J. C.^ORCID,Regan D.,Fung H. H.,Tang Y.

Funder

Boeing Co

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8103303/08070445.pdf?arnumber=8070445

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