A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond fT
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289029.pdf?arnumber=10289029
Reference9 articles.
1. A 4W V-band MMIC Power Amplifier with 24% Power-Added Efficiency
2. Broadband GaN-Based Power Amplifier MMIC and Module for V-Band Measurement Applications
3. A 28-90-GHz GaN Power Amplifier MMIC Using an Integrated fT Doubler Topology;?wikli?ski;2021 IEEE MTT-S Int Microw Symp (IMS),2021
4. V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process
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1. A 52-to-86GHz V-/E-Band GaN Distributed Combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. V-Band GaN Power Amplifier MMICs with High Power-Bandwidth and Low Gain Compression for RF Inter-Satellite Links;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W;IEEE Microwave and Wireless Technology Letters;2024-05
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