Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9162004/9166849/09166887.pdf?arnumber=9166887
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Comprehensive Investigation of $\text{GaSb}/\text{GaAs}_{0.5}\text{Sb}_{0.5}/\text{GaAs}$ based Double Gate Source-Pocket Engineered Heterogeneous Gate Dielectric Vertical TFET for Optimized Low-Power Applications;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02
2. Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application;IEEE Access;2024
3. Impact of Working Temperature on the ION/IOFFRatio of a Hetero Step‐Shaped Gate TFET With Improved Ambipolar Conduction;Nanodevices for Integrated Circuit Design;2023-10-17
4. Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26
5. Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Low Power Application;Silicon;2022-06-23
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