Doping induced threshold voltage and I<sub>ON</sub>/I<sub>OFF</sub> ratio modulation in surrounding gate MOSFET for analog applications-Reference-Cited by-同舟云学术

Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications

Published:2022-11-26 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
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Author:

Das Amit¹,Kanaujia Binod Kumar¹,Deswal S.S.²,Rewari Sonam³,Gupta R. S.⁴

Affiliation:

1. Jawaharlal Nehru University,School of Computational and Integrative Sciences,New Delhi,India,110067

2. Maharaja Agrasen Institute of Technology,Department of Electrical and Electronics Engineering,New Delhi,India,110086

3. Delhi Technological University,Department of Electronics and Communication Engineering,New Delhi,India,110042

4. Maharaja Agrasen Institute of Technology,Department of Electronics and Communication Engineering,New Delhi,India,110086

Publisher

IEEE

Link

Reference24 articles.

1. Optimization of Gate Stack MOSFETs with Quantization Effects;mangla;J Semicond Technol Sci,2004

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