Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Low Power Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01967-2.pdf
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1. Gate-All-Around Nanowire TFET with Heterojunction and Core Insulator: Design and Analysis;ECS Journal of Solid State Science and Technology;2023-11-01
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