Gate-All-Around Nanowire TFET with Heterojunction and Core Insulator: Design and Analysis

Abstract

This article develops and compares a novel heterojunction gate-all-around nanowire TFET (SiGe-CI-GAA-NWTFET) with core insulator to conventional silicon gate-all-around nanowire TFET (Si-GAA-NWTFET) and heterojunction gate-all-around nanowire TFET (SiGe-GAA-NWTFET) without core insulator. Three of the devices are investigated for performance in both DC and RF/Analog. The proposed device produces greater ON-current, lower OFF-current, and steeper characteristics. Thus making it suitable for high-switching circuits. Due to the strong transconductance of the device, simulated RF analysis findings such as cut-off frequency, and GBP, confirm its applicability for RF applications also.