Comparison of SiGeC/SiGe/SiC–Si heterojunction based vertical nanowire FET using non equilibrium Green's function-Reference-Cited by-同舟云学术

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Comparison of SiGeC/SiGe/SiC–Si heterojunction based vertical nanowire FET using non equilibrium Green's function

Published:2024-05 Issue: Volume:189 Page:207814
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Ranjan Ravi,Kumar Prateek^ORCID,Kumar Naveen

Publisher

Elsevier BV

Reference24 articles.

1. Design and investigation of split-gate MoTe2-based FET as single transistor and gate using nonequilibrium Green's function;Kumar;IEEE Trans. Electron. Dev.,2020

2. Performance evaluation of transition metal dichalcogenides based steep subthreshold slope tunnel field effect transistor;Kumar;Silicon,2020

3. Design and estimation of GaAsSb/InGaAs hetero-junction double-dual gate vertical tunnel FET (HJ-VTFET) biosensor;Singh;J. Mater. Sci. Mater. Electron.,2024

4. Design and parametric analysis of GaN on silicon high electron mobility transistor for RF performance enhancement;Singh;Silicon,2022

5. Theory of the junctionless nanowire FET;Gnani;IEEE Trans. Electron. Dev.,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A machine learning approach to accelerate reliability prediction in nanowire FETs from self-heating perspective;Microelectronics Reliability;2024-10

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