6.1 A 112Gb/s Serial Link Transceiver With 3-tap FFE and 18-tap DFE Receiver for up to 43dB Insertion Loss Channel in 7nm FinFET Technology-Reference-Cited by-同舟云学术

6.1 A 112Gb/s Serial Link Transceiver With 3-tap FFE and 18-tap DFE Receiver for up to 43dB Insertion Loss Channel in 7nm FinFET Technology

Published:2023-02-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Zhang Bo¹,Vasani Anand¹,Sinha Ashutosh²,Nilchi Alireza¹,Tong Haitao¹,Rao Lakshmi¹,Khanoyan Karapet¹,Hatamkhani Hamid¹,Yang Xiaochen¹,Meng Xin¹,Wong Alexander²,Kim Jun²,Jing Ping²,Sun Yehui²,Nazemi Ali¹,Liu Dean²,Brewster Anthony¹,Cao Jun¹,Momtaz Afshin¹

Affiliation:

1. Broadcom,Irvine,CA

2. Broadcom,San Jose,CA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067657.pdf?arnumber=10067657

Reference6 articles.

1. A 112.5Gb/s ADC-DSP-Based PAM-4 Long-Reach Transceiver with >50dB Channel Loss in 5nm FinFET

2. A 116Gb/s DSP-Based Wireline Transceiver in 7nm CMOS Achieving 6pJ/b at 45dB Loss in PAM-4/Duo-PAM-4 and 52dB in PAM-2;lacroix;ISSCC,2021

3. An 182mW 1–60Gbps Configurable PAM4/NRZ Transceiver for Large Scale ASIC Integration in 7-nm FinFET Technology;kocaman;ISSCC,2022

4. Techniques for high-speed implementation of nonlinear cancellation

5. A 460mW 112Gb/s DSP-Based Transceiver with 38dB Loss Compensation for Next-Generation Data Centers in 7nm FinFET Technology;ali;ISSCC,2020

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