A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm-Reference-Cited by-同舟云学术

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A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

Published:2017-08 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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Author:

Bouvot Simon,Goncalves Joao Carlos Azevedo,Bossuet Alice,Quemerais Thomas,Lepilliet Sylvie,Ducournau Guillaume,Danneville Francois,Gloria Daniel

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8038157/8048085/08048233.pdf?arnumber=8048233

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

2. Resonant Impedance Tuners: Theory, Design, Power Handling, and Repeatability;IEEE Transactions on Microwave Theory and Techniques;2023

3. Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of (Bi)CMOS Technologies;2022 99th ARFTG Microwave Measurement Conference (ARFTG);2022-06-24

4. Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology;IEEE Transactions on Microwave Theory and Techniques;2022-01

5. Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz;IEEE Transactions on Microwave Theory and Techniques;2019-09

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