Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology-Reference-Cited by-同舟云学术

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Published:2022-01 Issue:1 Volume:70 Page:444-452
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Maye C.^ORCID,Lepilliet S.,Okada E.^ORCID,Margalef-Rovira M.^ORCID,Alaji I.^ORCID,Gloria D.,Ducournau G.,Gaquiere C.^ORCID

Funder

Electronic Components and Systems for European Leadership TowARds Advanced bicmos Nano Technology platforms for rf and thz applicatiOns (ECSEL TARANTO) Project

Nano2022 Project

IEMN Characterization (PCMP) facilities and contributes to the IEMN Ultra- High Data-rate (UHD) Flagship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9670865/09546179.pdf?arnumber=9546179

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

3. Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of (Bi)CMOS Technologies;2022 99th ARFTG Microwave Measurement Conference (ARFTG);2022-06-24

4. Load-pull measurement of SiGe:C HBT in BiCMOS 55 nm featuring 11 dBm of output power at 185 GHz;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03