Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of (Bi)CMOS Technologies
Author:
Affiliation:
1. Univ. Lille, CNRS, Centrale Lille, Yncrea Lille, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN,Lille,France,F-59000
2. TR & D, STMicroelectronics,Crolles,France
3. MC2-Technologies,Villeneuve-d’Ascq,France,59493
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9896401/9896407/09896490.pdf?arnumber=9896490
Reference6 articles.
1. In-Situ Silicon Integrated Tuner for Automated On-Wafer MMW Noise Parameters Extraction using Multi-Impedance Method for Transistor Characterization
2. A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
3. mm-Wave Through-Load Element for On-Wafer Measurement Applications
4. W-Band RF MEMS Double and Triple-Stub Impedance Tuners
5. Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology;maye;IEEE Trans Microw Theory Tech,2021
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