A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology-Reference-Cited by-同舟云学术

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A G-Band Glass Interposer Technology for the Integration of an Amplified Noise Source based on SiGe BiCMOS 55-nm Technology

Published:2024-06-16 Issue: Volume: Page:31-34
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Container-title:2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Alawar Maya¹,Fiorese Victor²,Lépilliet Sylvie¹,Gloria Daniel³,Ducournau Guillaume¹,Dubois Emmanuel¹

Affiliation:

1. Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts de France, Junia,UMR 8520 – IEMN –Institut d’Electronique, de Microélectronique et de Nanotechnologie,France

2. STMicroelectronics,MDG-RFC Organization,France

3. STMicroelectronics,QMT-Smart Power & Dig FEM-TDP Organization,France

Funder

STMicroelectronics

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10599936/10599927/10599954.pdf?arnumber=10599954

Reference9 articles.

1. SiGe BiCMOS Current Status and Future Trends in Europe

2. A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

3. A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

4. Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

5. A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology

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