Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz-Reference-Cited by-同舟云学术

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

Published:2019-09 Issue:9 Volume:67 Page:3732-3742
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Azevedo Goncalves Joao Carlos^ORCID,Ghanem Haitham^ORCID,Bouvot Simon^ORCID,Gloria Daniel,Lepilliet Sylvie,Ducournau Guillaume^ORCID,Gaquiere Christophe^ORCID,Danneville Francois

Funder

ECSEL TARANTO project toward advanced BiCMOS nanotechnology platforms for RF and THz application

EURAMET ADVENT project “16ENG06 advanced: metrology for advanced energy-saving technology in next generation electronics applications.”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8824019/08792397.pdf?arnumber=8792397

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