A Simple Piecewise Model of Reset/Set Transitions in Bipolar ReRAM Memristive Devices-Reference-Cited by-同舟云学术

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A Simple Piecewise Model of Reset/Set Transitions in Bipolar ReRAM Memristive Devices

Published:2018-10 Issue:10 Volume:65 Page:3469-3480
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Al Chawa Mohamad Moner^ORCID,de Benito Carol^ORCID,Picos Rodrigo^ORCID

Funder

Ministerio de Economía y Competitividad

excellence networks REFLEXIO and NANOVAR

FEDER funds

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/8453271/08357574.pdf?arnumber=8357574

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Behavioural Compact Model for Programmable Neuromorphic ReRAM;Proceedings of the 18th ACM International Symposium on Nanoscale Architectures;2023-12-18

2. A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-11

3. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux;2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST);2022-06-08

4. Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map;Electronics;2022-05-24

5. Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling;IEEE Journal of the Electron Devices Society;2022

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