Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux-Reference-Cited by-同舟云学术

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Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux

Published:2022-06-08 Issue: Volume: Page:
ISSN:
Container-title:2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)
language:
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Author:

Al Chawa M. M.¹,de Benito C.²,Castan H.³,Duenas S.³,Stavrinides S. G.⁴,Tetzlaff R.¹,Picos R.²

Affiliation:

1. Technische Universität Dresden,Institute of Circuits and Systems,Dresden,Germany

2. Universitat de les Illes Balears,Industrial Engineering and Construction Dept.,Palma, Mallorca,Spain

3. University of Valladolid,Department of Electronics,Valladolid,Spain

4. International Hellenic University,School of Science and Technology,Thessaloniki,Greece

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9837335/9837476/09837658.pdf?arnumber=9837658

Reference30 articles.

1. A Compact Memristor Model for Neuromorphic ReRAM Devices in Flux-Charge Space

2. Experimental demonstration of associative memory with memristive neural networks

3. Emerging Memory Technologies

4. A Theoretical Approach to Memristor Devices

5. Resistance switching memories are memristors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact Model for Ovonic Threshold Switching Based on a Delay Circuit;2024 13th International Conference on Modern Circuits and Systems Technologies (MOCAST);2024-06-26

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