Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling-Reference-Cited by-同舟云学术

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Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling

Published:2022 Issue: Volume:10 Page:466-473
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Picos Rodrigo¹^ORCID,Al Chawa Mohamad Moner²^ORCID,De Benito Carola¹^ORCID,Stavrinides Stavros G.³^ORCID,Chua Leon O.⁴^ORCID

Affiliation:

1. Industrial Engineering and Construction Department, Universitat de les Illes Balears, Palma, Spain

2. Faculty of ECE, Technical University Dresden, Dresden, Germany

3. School of Science and Technology, International Hellenic University, Thermi, Greece

4. EECE Department, University of California at Berkeley, Berkeley, CA, USA

Funder

Spanish Ministry of Science

FEDER Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09721405.pdf?arnumber=9721405

Reference50 articles.

1. On the Thermal Models for Resistive Random Access Memory Circuit Simulation

2. A physical memristor based Muthuswamy–Chua–Ginoux system

3. A Simple Monte Carlo Model for the Cycle-to-Cycle Reset Transition Variation of ReRAM Memristive Devices

4. Stochasticity Modeling in Memristors

5. A physically based circuit model to account for variability in memristors with resistive switching operation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristors on ‘edge of chaos’;Nature Reviews Electrical Engineering;2024-08-27

2. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux;2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST);2022-06-08

3. Intrinsically Secure Non-Volatile Memory Using ReRAM Devices;IEEE Access;2022

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