A physically based circuit model to account for variability in memristors with resistive switching operation-Reference-Cited by-同舟云学术

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A physically based circuit model to account for variability in memristors with resistive switching operation

Published:2016-11 Issue: Volume: Page:
ISSN:
Container-title:2016 Conference on Design of Circuits and Integrated Systems (DCIS)
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Author:

Picos R.,Roldan J. B.,Chawa M. M. Al,Jimenez-Molinos F.,Garcia-Moreno E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7827413/7845255/07845383.pdf?arnumber=7845383

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design;IEEE Transactions on Electron Devices;2024-09

2. A Behavioural Compact Model for Programmable Neuromorphic ReRAM;Proceedings of the 18th ACM International Symposium on Nanoscale Architectures;2023-12-18

3. Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics;Micromachines;2022-10-08

4. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux;2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST);2022-06-08

5. Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling;IEEE Journal of the Electron Devices Society;2022

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