A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations
Author:
Affiliation:
1. Institute of Circuits and Systems, Technische Universität Dresden, Dresden, Germany
2. Western Digital San Jose Research Center, San Jose, CA, USA
Funder
Western Digital Corporation, San Jose, CA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture
Link
http://xplorestaging.ieee.org/ielx7/8919/10296081/10225437.pdf?arnumber=10225437
Reference25 articles.
1. Modeling and spectroscopy of ovonic threshold switching defects
2. A Theoretical Approach to Memristor Devices
3. A Behavioral Model of Digital Resistive Switching for Systems Level DNN Acceleration
4. Modeling and Simulations of the Integrated Device of Phase Change Memory and Ovonic Threshold Switch Selector With a Confined Structure
5. Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach
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1. A Compact Model for Ovonic Threshold Switching Based on a Delay Circuit;2024 13th International Conference on Modern Circuits and Systems Technologies (MOCAST);2024-06-26
2. A Behavioural Compact Model for Programmable Neuromorphic ReRAM;Proceedings of the 18th ACM International Symposium on Nanoscale Architectures;2023-12-18
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