Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach

Author:

Al Chawa M. Moner1ORCID,Picos Rodrigo1ORCID,Roldan Juan B.2,Jimenez-Molinos Francisco2,Villena Marco Antonio2,de Benito Carol1

Affiliation:

1. Electronic Engineering Group, Physics Department; Universitat de les Illes Balears; Spain

2. Department of Electronics and Computer Technology; Universidad de Granada; Spain

Funder

European ICT COST network MemoCIS

Federación Española de Enfermedades Raras

Spanish Ministry of Economy and Competitiveness

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Nanoionics-based resistive switching memories;Waser;Nature Materials,2007

2. The missing memristor found;Strukov;Nature,2008

3. Xie Y Emerging memory technologies 2014

4. Recent progress in resistive random access memories: materials, switching mechanisms and performance;Pan;Materials Science and Engineering,2014

5. Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors;Picos;RADIOENGINEERING,2015

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