An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications-Reference-Cited by-同舟云学术

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An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications

Published:2024-06-16 Issue: Volume:8 Page:940-943
ISSN:
Container-title:2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
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Author:

Kumar Annie¹,Yadav Sachin¹,Vais Abhitosh¹,Boccardi Guillaume¹,Mols Yves¹,Alcotte Reynald¹,Parvais Bertrand¹,Kunert Bernardette¹,Collaert Nadine¹

Affiliation:

1. imec,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10600173/10600174/10600299.pdf?arnumber=10600299

Reference18 articles.

1. Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

2. THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

3. InP / CMOS co-integration for energy efficient sub-THz communication systems

4. Prospects for High-Efficiency Silicon and lll-V Power Amplifiers and Transmitters in 100-300 GHz Bands

5. High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

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