Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies-Reference-Cited by-同舟云学术

Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

Published:2019-03-20 Issue: Volume: Page:
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Container-title:Advanced Etch Technology for Nanopatterning VIII
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Author:

Collaert Nadine,Alian Alireza,De Jaeger Brice,Peralagu Uthayasankararan,Vais Abhitosh,Walke Amey,Witters Liesbeth,Yu Hao,Capogreco Elena,Devriendt Katia,Hopf Toby,Kenis Karine,Mannaert Geert,Milenin Alexey P.,Peter Antony,Sebaai Farid,Teugels Lieve,van Dorp Dennis,Wostyn Kurt,Horiguchi Naoto,Waldron Niamh

Publisher

SPIE

Reference30 articles.

1. Advancing CMOS beyond the Si roadmap with Ge and III/V devices;Heyns,2011

2. Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs;van Dal,2018

3. Gate-All-Around InGaAs Nanowire FETs with Peak Transconductance of 2200μA/μm at 50nm Lg using a Replacement Fin RMG Flow;Waldron,2015

4. https://www.qualcomm.com/media/documents/files/whitepaper-making-5g-nr-a-reality.pdf

5. 100-340GHz: Transistors and Applications;Rodwell,2018

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