THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS-Reference-Cited by-同舟云学术

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THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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Author:

Urteaga M.,Carter A.,Griffith Z.,Pierson R.,Bergman J.,Arias A.,Rowell P.,Hacker J.,Brar B.,Rodwell M.J.W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7731987/7738940/07738973.pdf?arnumber=7738973

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Nanopackaging for FutureG Solutions;IEEE Nanotechnology Magazine;2024-04

3. 100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator Assembly;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design;IEEE Transactions on Microwave Theory and Techniques;2023

5. Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs;Electronics;2022-09-22

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