Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents
Author:
Affiliation:
1. Purdue University,School of Electrical and Computer Engineering,West Lafayette,IN,USA
2. Purdue University,School of Materials Engineering,West Lafayette,IN,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019494.pdf?arnumber=10019494
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1. Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
2. Influence of a highly doped buried layer for HfInZnO thin-film transistors
3. Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors
4. Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping
5. Role of silicon in silicon-indium-zinc-oxide thin-film transistor
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