Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm-Reference-Cited by-同舟云学术

Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Lee Tsung-En¹,Su Yuan-Chun¹,Lin Bo-Jiun¹,Chen Yi-Xuan²,Yun Wei-Sheng¹,Ho Po-Hsun¹,Wang Jer-Fu¹,Su Sheng-Kai¹,Hsu Chen-Feng¹,Mao Po-Sen³,Chang Yu-Cheng³,Chien Chao-Hsin²,Liu Bo-Heng⁴,Su Chien-Ying⁴,Kei Chi-Chung⁴,Wang Han⁵,Philip Wong H.-S.¹,Lee T. Y.¹,Chang Wen-Hao³,Cheng Chao-Ching¹,Radu Iuliana P.¹

Affiliation:

1. Corporate Research, Taiwan Semiconductor Manufacturing Company,Hsinchu,Taiwan

2. Institute of Electronics National Yang Ming Chiao Tung University,Hsinchu,Taiwan

3. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan

4. Taiwan Instrument Research Institute,National Applied Research Laboratories,Hsinchu,Taiwan

5. Corporate Research, Taiwan Semiconductor Manufacturing Company,San Jose,USA

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019552.pdf?arnumber=10019552

Reference21 articles.

1. Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

2. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

3. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine

4. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

5. High-κ perovskite membranes as insulators for two-dimensional transistors

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