Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors-Reference-Cited by-同舟云学术

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

Published:2014-07-28 Issue:36 Volume:26 Page:6255-6261
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zou Xuming¹,Wang Jingli¹,Chiu Chung-Hua²,Wu Yun³,Xiao Xiangheng¹,Jiang Changzhong¹,Wu Wen-Wei²,Mai Liqiang⁴,Chen Tangsheng³,Li Jinchai¹,Ho Johnny C.⁵,Liao Lei¹

Affiliation:

1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

2. Department of Materials Science and Engineering; National Chiao Tung University; Hsin-chu 30010 Taiwan

3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory; Nanjing Electronic Device Institute; Nanjing China

4. WUT-Harvard Joint Nano Key Laboratory; School of Materials Science and Engineering; Wuhan University of Technology; Wuhan China

5. Department of Physics and Materials Science; City University of Hong Kong; Tat Chee Avenue Kowloon Hong Kong SAR China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference49 articles.

1. Single-layer MoS2 transistors

2. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

3. MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

4. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

5. Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

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