FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors-Reference-Cited by-同舟云学术

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Casamento J.¹,Nomoto K.²,Nguyen T. S.¹,Lee H.²,Savant C.¹,Li L.²,Hickman A.²,Maeda T.³,Encomendero J.²,Gund V.²,Lal A.²,Hwang J. C. M.¹,Xing H. G.¹,Jena D.¹

Affiliation:

1. Cornell University,Department of Materials Science and Engineering,Ithaca,NY,USA,14853

2. Cornell University,School of Electrical and Computer Engineering,Ithaca,NY,USA,14853

3. Cornell University,Kavli Institute at Cornell for Nanoscale Science,Ithaca,NY,USA,14853

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019485.pdf?arnumber=10019485

Reference12 articles.

1. Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

2. Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy

3. ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

4. Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide

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