Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

Author:

Casamento Joseph1ORCID,Lee Hyunjea2,Chang Celesta S.34ORCID,Besser Matthew F.5ORCID,Maeda Takuya6ORCID,Muller David A.36ORCID,Xing Huili (Grace)126ORCID,Jena Debdeep126ORCID

Affiliation:

1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

3. Department of Physics, Cornell University, Ithaca, New York 14853, USA

4. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA

5. Division of Materials Sciences and Engineering, Ames Laboratory, Ames, Iowa 50011, USA

6. Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA

Funder

Defense Advanced Research Projects Agency

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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