Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films-Reference-Cited by-同舟云学术

Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films

Published:2018-03-06 Issue:13 Volume:215 Page:1700831
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kurz Nicolas¹,Lu Yuan²,Kirste Lutz²,Reusch Markus²,Žukauskaitė Agnė²,Lebedev Vadim²,Ambacher Oliver²³

Affiliation:

1. Laboratory for Compound Semiconductor Microsystems, IMTEK-Department of Microsystems Engineering, University of Freiburg; Georges-Koehler-Allee 103 79110 Freiburg Germany

2. Fraunhofer Institute for Applied Solid State Physics; Tullastrasse 72 79108 Freiburg Germany

3. Laboratory for Power Electronics, INATECH-Department of Sustainable Systems Engineering; Emmy-Noether-Straße 2 79110 Freiburg Germany

Funder

COMET K1center ASSIC − Austrian Smart Systems Integration Research Center

Fraunhofer Attract excellence stipend program (project 12 PiTRANS) - Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700831/fullpdf

Reference43 articles.

1. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

2. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

3. Electromechanical properties of Al0.9Sc0.1N thin films evaluated at 2.5 GHz film bulk acoustic resonators

4. Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

5. ScGaN and ScAlN: emerging nitride materials

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