Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In<sub>2</sub> O<sub>3</sub> for High-Performance Enhancement Mode BEOL Transistors-Reference-Cited by-同舟云学术

Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In₂ O₃ for High-Performance Enhancement Mode BEOL Transistors

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
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Author:

Hu Yaoqiao¹,Ye Huacheng²,Aabrar Khandker Akif²,Kirtania Sharadindu Gopal²,Chakraborty Wriddhi²,Datta Suman¹,Cho Kyeongjae¹

Affiliation:

1. University of Texas at Dallas,Department of Materials Science and Engineering,Richardson,TX,USA,75080

2. University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556

Funder

Semiconductor Research Corporation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019366.pdf?arnumber=10019366

Reference23 articles.

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