Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors-Reference-Cited by-同舟云学术

Atomic Layer Deposition of WO₃-Doped In₂O₃ for Reliable and Scalable BEOL-Compatible Transistors

Published:2024-04-30 Issue:19 Volume:24 Page:5737-5745
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yoo Chanyoung¹²³^ORCID,Hartanto Jonathan¹^ORCID,Saini Balreen¹^ORCID,Tsai Wilman¹^ORCID,Thampy Vivek²,Niavol Somayeh Saadat⁴,Meng Andrew C.⁴^ORCID,McIntyre Paul C.¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

2. SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

3. Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea

4. Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States

Funder

U.S. Department of Energy

Stanford System-X AMEND

TSMC-Stanford Joint Development Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00746

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