Reliability of Dual Damascene TSV for high density integration: The electromigration issue-Reference-Cited by-同舟云学术

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Reliability of Dual Damascene TSV for high density integration: The electromigration issue

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Moreau S.,Bouchu D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06532065.pdf?arnumber=6532065

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Cu/SiO₂ Rough Interface in TSV for High-Power Device Under Electromigration;IEEE Transactions on Electron Devices;2023-10

2. Optimization of Cu interconnects - SiCN interfacial adhesion by surface treatments;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

3. Compact modeling of through silicon vias for thermal analysis in 3-D IC structures;Sādhanā;2021-02-05

4. A Novel Thermal Modeling of Through Silicon Vias in 3-D IC structures;International Journal of Materials;2021-01-15

5. Reliability Challenges of Silicon-Based Physically Unclonable Functions;Physically Unclonable Functions;2018

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