Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs-Reference-Cited by-同舟云学术

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Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Ghosh Amartya,Hao Jifa,Cook Michael,Kendrick Chris,Suliman Samia A.,Hall Gavin D.R.,Kopley Tom,Awadelkarim Osama O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128318.pdf?arnumber=9128318

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Si and SiC MOSFETs responses to electrical stress and the observation of parameter recovery in SiC MOSFET by stress superposition;Engineering Research Express;2024-08-06

2. Positive Bias Temperature Instability in SiC-Based Power MOSFETs;Micromachines;2024-06-30

3. Exploring the border traps near the valence band in the SiO2 - SiC system using above-band-gap optical excitation;Physical Review Applied;2024-06-27

4. Exploring the border traps near the SiO₂-SiC interface using conductance measurements;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests;Electronics;2024-03-28

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