High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage-Reference-Cited by-同舟云学术

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High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

Published:2001 Issue:8 Volume:48 Page:1633-1640
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Takamiya M.,Hiramoto T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/20271/00936579.pdf?arnumber=936579

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement and Analysis of PD-SOI Static Latches Based on Bistable-Gated-Bipolar Device;IEEE Journal of Solid-State Circuits;2007-11

2. High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts;Microelectronics Reliability;2005-07

3. Modelling of the dynamic threshold MOSFET;IEE Proceedings - Circuits, Devices and Systems;2005

4. Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control;Solid-State Electronics;2004-06

5. Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2004-04-09

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