Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control

Author:

Numata Toshinori,Noguchi Mitsuhiro,Takagi Shin-ichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Back-gated CMOS on SOIAS for dynamic threshold voltage control;Yang;IEEE Trans. Electron Devices,1997

2. Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors;Tarr;J. Vac. Sci. Technol. A,1998

3. Horiuchi M, Teshima T, Tokumasu K, Yamaguchi K. High-current, small parasitic capacitance MOSFET on a poly-Si interlayered (PSI: Ψ) SOI wafer, VLSI Technol Symp, 1995. p. 33–34

4. Omura Y, Nakashima S, Izumi K, Ishii T. 0.1-μm-Gate, Ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer, in IEDM Tech Dig, 1991. p. 675–678

5. Submicrometer near-intrinsic thin-film SOI complementary MOSFETs;Lee;IEEE Trans. Electron Devices,1989

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