High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts

Author:

Lee Yao-Jen,Chao Tien-Sheng,Huang Tiao-Yuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation;Assaderaghi;IEEE Electron Device Lett,1992

2. High performance 0.1μm dynamic threshold MOSFET using indium channel implantation;Chang;IEEE Electron Device Lett,2000

3. High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage;Takamiya;IEEE Trans Electron Devices,2001

4. A new SOI MOSFET structure with junction type body contact;Chung;IEDM Tech Dig,1999

5. SOI MOSFET structure with a junction-type body contact for suppression of pass gate leakage;Chung;IEEE Trans Electron Device,2001

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