Modeling of $V_{\rm th}$ Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects-Reference-Cited by-同舟云学术

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Modeling of $V_{\rm th}$ Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

Published:2008-04 Issue:4 Volume:55 Page:1020-1026
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jung Sang-Goo,Lee Keun-Woo,Kim Ki-Seog,Shin Seung-Woo,Lee Seaung-Suk,Om Jae-Chul,Bae Gi-Hyun,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4475396/04475401.pdf?arnumber=4475401

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