Author:
Lee Jae-Yun,Tukhtaev Anvar,Yoo Suchang,Kim Yong-Hwan,Choi Seong-Gon,Ryu Heung Gyoon,Jeong Yong Jin,Kim Sung-Jin
Abstract
High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have made significant progress as amorphous silicon replacements for electronics and commercial displays. On the other hand, developing metal oxide transistors with low processing temperatures remains a difficulty. The hightemperature annealing process causes very instability in the plastic substrate. Here, we introduce IGZO TFTs that shows enhanced electrical properties environmental stability by laser post-annealing. After annealing process, the laser post-annealing process was given at 80 MHz, pulse width 140 fs, for 50 seconds. The improved electrical characteristics of this laser post-annealed IGZO TFTs were: 9.03 cm<sup>2</sup>/Vs; 2.2×10<sup>7</sup> on/off current ratio. The IGZO TFT to which laser post-annealing was applied had a flat surface, and it was confirmed that the combination of internal metal and oxygen was urged, and the leakage current problem was improved by suppressing excessive generation of oxygen vacancy. Furthermore, the voltage transfer curve was measured after fabricating the N-MOS logic inverter circuit, this inverter showed a value of 80.8% the total noise margin.
Funder
Ministry of Science and ICT
Institute for Information and communications Technology Planning and Evaluation
National Research Foundation of Korea
Ministry of Education
Chungbuk National University
Publisher
The Korean Institute of Metals and Materials
Subject
Metals and Alloys,Surfaces, Coatings and Films,Modeling and Simulation,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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