Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing-Reference-Cited by-同舟云学术

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Published:2024-01-31 Issue:2 Volume:15 Page:225
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Zhang Xiaohui¹²,Li Yaping²,Li Yanwei¹,Xie Xinwang¹,Yin Longhai¹

Affiliation:

1. Jihua Laboratory, Foshan 528200, China

2. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510275, China

Abstract

We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were prepared by the physical vapor deposition method without any other annealing process. The crystalline state and composition of the as-deposited film and the excimer-laser-annealed films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. In order to further enhance the electrical performance of TFT, we constructed a dual-heterojunction TFT structure. The results showed that the field-effect mobility could be improved to 9.8 cm2/V·s. Surprisingly, the device also possessed good optical stability. The electron accumulation at the a-IZO/HfO, HfO/a-IGZO, and a-IGZO/gate insulator (GI) interfaces confirmed the a-IGZO-channel conduction. The dual-heterojunction TFT with IZO/HfO/a-IGZO-assisted ELA provides a guideline for overcoming the trade-off between high mobility (μ) and positive VTh control for stable enhancement mode operation with increased ID.

Funder

National Key Research and Development Program of China

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/2/225/pdf

Reference38 articles.

1. Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing;Yang;IEEE Electron Device Lett.,2010

2. Characteristics of laser-annealed ZnO thin film transistors;Kim;Thin Solid Film.,2010

3. Synergistically Enhanced Performance and Reliability of Abrupt Metal-Oxide Heterojunction Transistor;Wang;Adv. Electron. Mater.,2022

4. Effect of Femtosecond Laser Postannealing on a-IGZO Thin-Film Transistors;Lee;IEEE Trans. Electron Devices,2021

5. Kim, S., Kim, C.J., Park, J.C., Song, I., Kim, S.W., Yin, H., Lee, E., Lee, J.C., and Park, Y. (2008, January 15–17). High Performance oxide thin Film Transistors with Dual Active Layers. Proceedings of the 2008 IEEE International Electron Devices Meeting, San Francisco, CA, USA.