Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time
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Published:2023-02-24
Issue:5
Volume:13
Page:2909
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ISSN:2076-3417
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Container-title:Applied Sciences
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language:en
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Short-container-title:Applied Sciences
Author:
Cho Taeyoung1, Kim Hyunju1, Kang Myounggon1ORCID
Affiliation:
1. Department of Electronics Engineering, Korea National University of Transportation, Room No. 326, Smart ICT Building, 50 Daehak-ro, Chungju-si 27469, Chungbuk, Republic of Korea
Abstract
The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel potential of the selected WL increased owing to NLSB. The channel potential of the selected WL, increased by NLSB, was analyzed as a function of the threshold voltage (Vth) of the adjacent cell and according to the change in time. The analysis confirmed that the channel potential value decreased gradually over time. However, it was confirmed that the rate at which the channel potential decreases was different depending on the Vth of the adjacent cell. The number of electrons in nitride is different for each Vth. These electrons affect the holes of the spacer and channel. The analysis also confirmed that the movement of electrons was caused by the difference in the hole concentration in the spacer and channel.
Funder
National R&D Program through the National Research Foundation of Korea Basic Science Research Program through the National Research Foundation of Korea
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
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