Random Bitstream Generation Using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Random Bitstream Generation Using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions

Published:2022-12 Issue:2 Volume:8 Page:194-202
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Liu Samuel¹^ORCID,Kwon Jaesuk¹,Bessler Paul W.¹^ORCID,Cardwell Suma G.²,Schuman Catherine³^ORCID,Smith J. Darby²,Aimone James B.²^ORCID,Misra Shashank²,Incorvia Jean Anne C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX, USA

2. Sandia National Laboratories, Albuquerque, NM, USA

3. Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA

Funder

DOE Office of Science (Advanced Scientific Computing Research/Basic Energy Sciences) Microelectronics Co-Design Project COINFLIPS

National Science Foundation Graduate Research Fellowship Program

National Science Foundation “Research Experiences for Undergraduates” in accordance with the NSF Program Solicitation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/6570653/9998452/9998481-aam.pdf

Reference42 articles.

1. Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

2. Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

3. Neuromorphic scaling advantages for energy-efficient random walk computations

4. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

5. Thermal fluctuation effects on spin torque induced switching: Mean and variations

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