Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

Author:

Lee Min Hyeok1ORCID,Kim Seok-Jong23ORCID,Yoon Seok In1ORCID,Lee Jeong Kyu1ORCID,Ko Han Seok1ORCID,Kim Gyusang4ORCID,Hong Seokhie4ORCID,Lee Kyung-Jin2ORCID,Kim Young Keun1ORCID

Affiliation:

1. Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea

2. Department of Physics Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

3. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

4. Institute of Cyber Security & Privacy (ICSP) School of Cybersecurity Korea University Seoul 02841 Republic of Korea

Abstract

With the growing demand for high‐speed electronic devices with low energy consumption, spin–orbit torque (SOT) has become a significant focus. SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping‐like torque (DLT) and the longitudinal field‐like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)/NM 2 (Nb)/FM (CoFeB) are devised to manipulate the FLT‐to‐DLT ratio (η) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as η increases. The SOT devices with substantial η generate random numbers. The National Institute of Standards and Technology Special Publication 800‐90B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT‐based TRNG devices.

Funder

National Research Foundation of Korea

Samsung

Publisher

Wiley

Subject

General Earth and Planetary Sciences,General Environmental Science

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